Correlation between the O+2induced electron emission coefficient and the removal rate of Cu impurities segregated at the SiO2/Si interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104985
Reference13 articles.
1. Implantation and ion beam mixing in thin film analysis
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3. Abrupt reduction of the partial sputtering yield of copper in silicon due to beam induced oxidation and segregation
4. Abrupt reduction of the partial sputtering yield of copper in silicon due to beam induced oxidation and segregation
5. Field‐induced segregation effects during secondary‐ion mass spectrometry depth profiling of Cu and Na implanted in silicon
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1. Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials;Applied Surface Science;2006-07
2. Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization;Journal of Applied Physics;2001-05
3. Low energy O2+ and N2+ beam-induced profile broadening effects in Si;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-05
4. Segregation effects of Li, K, and F in Si during depth profiling by oxygen ions;Journal of Applied Physics;2000-03
5. On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment;Surface and Interface Analysis;2000-02
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