Oxygen distribution in a thin epitaxial silicon layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353356
Reference5 articles.
1. The effect of the denudation anneal on the precipitate dissolution in Czochralski silicon wafers during the three‐step internal gettering anneal
2. A characterization of theP/P+epitaxial and substrate interface using the pulsed metal‐oxide‐semiconductor capacitance‐time transient analysis
3. A Formation Mechanism of the Defect‐Free Denuded Zone in Antimony‐Doped Epitaxial Substrate Wafers
4. Impurity Distribution in Epitaxial Growth
5. Impurity Redistribution during Silicon Epitaxial Growth and Semiconductor Device Processing
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer;Applied Physics Letters;2006-06-12
2. High Sensitivity Determination of Oxygen Distribution in Thin Epitaxial Silicon Films by Carbon Implantation‐Photoluminescence Measurement;Journal of The Electrochemical Society;1999-01-01
3. 2 Diffusion in Si - References;Diffusion in Semiconductors
4. 2 Diffusion in Si;Diffusion in Semiconductors
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