Formation of multiple quantum wells m 2D/3D perovskite heterostructures invalidates phonon bottleneck effect

Author:

Yang Zhe1,Zhu Renlong1,Zheng Xiaoxuan1,Pei Quanbing1,Tan Junjun2,Ye Shuji12

Affiliation:

1. Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China a , Hefei 230026, China

2. Hefei National Laboratory, University of Science and Technology of China b , Hefei 230088, China

Abstract

The importance of the phonon bottleneck effect on the optoelectronic properties of organic-inorganic hybrid perovskites (OIHPs) has been well documented. While randomly distributed multiple quantum wells (MQWs) are frequently generated in 2D/3D perovskite heterostructures, the influence of MQWs formation in 2D/3D perovskite heterostructures on the phonon bottleneck effect is poorly understood. In this study, we construct 2D/3D perovskite heterostructures using 2D OIHP (NH3(CH2)8NH3PbI4, OdAPbI4) to passivate 3D OIHP (FAPbI3) and investigate their excitons and carrier dynamics by employing photoluminescence (PL) spectroscopy and femtosecond optical-pump terahertz-probe spectroscopy (fsOPTPS). We observe the formation of MQWs and establish a structure-dynamics-property relationship among the exciton formation time ( TEF), the hot carrier cooling rate (kcool) and the effective charge-carrier mobility(ϕμ). The formation of MQWs could significantly invalidate the phonon bottleneck effect and modulate the optoelectronic properties of 2D/3D perovskite heterostructures. This work provides valuable information on the importance of band alignment and the phonon bottleneck effect in the strategy of 2D/3D perovskite heterostructures.

Publisher

AIP Publishing

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