Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation
Author:
Affiliation:
1. Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
2. School of Integrated Technology, Yonsei University, Incheon 406-840, Korea
Funder
Ministry of Trade, Industry and Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5029858
Reference12 articles.
1. Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film
2. Dopant Segregation and Nickel Stanogermanide Contact Formation on $\hbox{p}^{+} \hbox{Ge}_{0.947}\hbox{Sn}_{0.053}$ Source/Drain
3. Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation
4. Characterization of nickel Germanide thin films for use as contacts to p-channel Germanium MOSFETs
5. Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Impact of the Si Content on the Electrical Properties of NiSi x Ge1–x Source/Drain Contact Metal for Ge pMOSFETs;IEEE Transactions on Electron Devices;2021-11
2. Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De‐Pinning of van der Waals Contacts;Advanced Functional Materials;2021-02-24
3. Formation of Thin NiGe Films by Magnetron Sputtering and Flash Lamp Annealing;Nanomaterials;2020-03-31
4. Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects;IEEE Journal of the Electron Devices Society;2020
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