Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal–oxide–semiconductor memory devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3555087
Reference21 articles.
1. A silicon nanocrystals based memory
2. Snapback behavior of the postbreakdown I–V characteristics in ultrathin SiO2 films
3. Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams
4. Electronic properties of Ge nanocrystals for non volatile memory applications
5. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/
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