Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors-Reference-Cited by-同舟云学术

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Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors

Published:1997-09 Issue:9 Volume:71 Page:1216-1218
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Giovannini S.,Carluccio R.,Mariucci L.,Pecora A.,Fortunato G.,Reita C.,Plais F.,Pribat D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119855

Reference19 articles.

1. State creation and hole trapping in polycrystalline silicon thin film transistors at high drain bias

2. Physical models for degradation effects in polysilicon thin-film transistors

3. Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations

4. Hot-carrier effects in Hydrogen-passivated p-channel polycrystalline-Si MOSFET's

5. Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Short Channel Effects on LTPS TFT Degradation;Journal of Display Technology;2013-09

2. Low frequency noise modeling of polycrystalline silicon thin-film transistors;The European Physical Journal Applied Physics;2009-07-08

3. Excess noise in polysilicon thin film transistors operated in kink regime;Electronics Letters;1997

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