High electron mobility in the selectively doped heterostructures grown by normal pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337648
Reference13 articles.
1. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
2. Growth of heterostructures for HEMT devices
3. Improved 2DEG mobility in selectively doped GaAs/N-AlGaAs grown by MOCVD using triethyl organometallic compounds
4. Optical properties of (AlAs)n(GaAs)nsuperlattices grown by metalorganic chemical vapor deposition
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