Nonalloyed high temperature ohmic contacts on Te-doped InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123688
Reference8 articles.
1. Compound semiconductor contact metallurgy
2. Au/Ge/Ni ohmic contacts to n-Type InP
3. Long wavelength InGaAsP/InP distributed feedback lasers grown by chemical beam epitaxy
4. Concentration dependent Zn diffusion in InP during metalorganic vapor phase epitaxy
5. Self‐aligned technology for tungsten‐contacted InP‐based etched mesa laser devices
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1. Low-resistive, CMOS-compatible ohmic contact schemes to moderately doped n-InP;Journal of Physics D: Applied Physics;2017-05-17
2. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data;Journal of Applied Physics;2013-10-21
3. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
4. InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer;Applied Physics Letters;2004-04-12
5. Effects of surface treatments on the electrical and the microstructural changes of Pd contact on p-type GaN;Journal of Electronic Materials;2001-03
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