Characterization of arsenide/phosphide heterostructure interfaces grown by gas‐source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Characterization of arsenide/phosphide heterostructure interfaces grown by gas‐source molecular beam epitaxy

Published:1995-08-14 Issue:7 Volume:67 Page:932-934
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lew A. Y.,Yan C. H.,Tu C. W.,Yu E. T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114699

Reference23 articles.

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature;Physical Review Materials;2018-10-16

4. Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model;Physical Review B;2016-01-27

5. Structural and compositional variations in ZnSnP2/GaAs superlattices;Applied Physics Letters;2000-10-30

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