Influence of interface potential on the effective mass in Ge nanostructures-Reference-Cited by-同舟云学术

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Influence of interface potential on the effective mass in Ge nanostructures

Published:2015-04-21 Issue:15 Volume:117 Page:154304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Barbagiovanni E. G.¹^ORCID,Cosentino S.¹^ORCID,Lockwood D. J.²^ORCID,Costa Filho R. N.³^ORCID,Terrasi A.¹,Mirabella S.¹

Affiliation:

1. MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, 95123 Catania, Italy

2. Measurement Science and Standards, National Research Council, Ottawa, Ontario K1A 0R6, Canada

3. Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceará, Brazil

Funder

CNPq (Brazilian agency)

PLAST_ICs

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4918549

Reference65 articles.

1. Nanocrystals for silicon-based light-emitting and memory devices

2. Synthesis, properties, and applications of silicon nanocrystals

3. Silicon quantum electronics

4. Defect‐related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

5. Quantum confinement in Si and Ge nanostructures: Theory and experiment

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2. Position-dependent mass from noncommutativity and its statistical descriptions;International Journal of Geometric Methods in Modern Physics;2024-02-28

3. Novel semi‐transparent solar cell based on ultrathin multiple Si/Ge quantum wells;Progress in Photovoltaics: Research and Applications;2022-12-28

4. Investigation of Quantum Size Effects on the Optical Absorption in Ultrathin Single Quantum Well Solar Cell Embedded as a Nanophotonic Resonator;IEEE Journal of Photovoltaics;2022-05

5. Position-dependent mass in strong quantum gravitational background fields;Journal of Physics A: Mathematical and Theoretical;2021-11-08

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