Effect of a chemical modification on growth silicon dioxide films on gallium arsenide prepared by the liquid phase deposition method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371805
Reference22 articles.
1. Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
2. Electrical and chemical stability of Al/SiNx/InP–metal–insulator– semiconductor diodes with gas phase polysulfide exposure on InP
3. Plasma-enhanced chemically vapour-deposited silicon dioxide for metal/oxide/semiconductor structures on InSb
4. Extremely low temperature formation of silicon dioxide on gallium arsenide
5. Near Room-Temperature Growth of $\bf SiO_{2}$ Films for p-HgCdTe Passivation by Liquid Phase Deposition
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