Origin of point defects in AgInS2/GaAs epilayer obtained from photoluminescence measurement
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405132
Reference15 articles.
1. Energy bands of AgInS2in the chalcopyrite and orthorhombic structures
2. Room‐Temperature Electrical Properties of Ten I‐III‐VI2 Semiconductors
3. An experimental investigation of the photoconductivity spectrum of a monocrystal of AgInS2 grown by Bridgman and chemical transport techniques
4. X-Ray Study of the Thermal Expansion Anisotropy in AgGaS2 and AgInS2 Compounds over the Temperature Range from 80 to 650 K
5. Electrical properties of polycrystalline chalcopyrite AgInS2films
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