Fabrication of single-electron transistors with electromigrated Ni nanogaps
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5031822
Reference22 articles.
1. C. Wasshuber, Computational Single-Electronics (Springer-Verlag Wien, New York, 2001) pp. 147−155.
2. Single electron transistors with ultra-thin Au nanowires as a single Coulomb island
3. Coulomb blockade phenomenon in ultra-thin gold nanowires
4. Electrostatic trapping of single conducting nanoparticles between nanoelectrodes
5. Fabrication of metallic electrodes with nanometer separation by electromigration
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