Valence band offset at the amorphous hydrogenated boron nitride-silicon (100) interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4739474
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1. Study of the phase nature of boron- and nitrogen-containing films by optical and photoelectron spectroscopy;Journal of Vacuum Science & Technology B;2020-07
2. Band offsets at amorphous hydrogenated boron nitride/high-k oxide interfaces from x-ray photoelectron spectroscopy with charging effects analysis;Journal of Vacuum Science & Technology B;2020-05
3. Tetrahedral amorphous boron nitride: A hard material;Journal of the American Ceramic Society;2019-09-25
4. Type-II band alignment of low-boron-content BGaN/GaN heterostructures;Journal of Physics D: Applied Physics;2019-06-07
5. Hydrogenated amorphous boron nitride: A first principles study;Journal of Non-Crystalline Solids;2018-12
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