Radiation defect dynamics in SiC with pre-existing defects
Author:
Affiliation:
1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA
Funder
Livermore Graduate Scholar Program
Nuclear Energy Enabling Technologies
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5093640
Reference23 articles.
1. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
2. Handbook of SiC properties for fuel performance modeling
3. Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
4. The temperature dependence of ion-beam-induced amorphization in β-SiC
5. Amorphization of SiC under ion and neutron irradiation
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1. The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC;AIP Advances;2022-06-01
2. Ionization-induced defect annealing by fission product ions in SiC and its implication for UO2-SiC composite fuels;Journal of Nuclear Materials;2022-03
3. IR photothermal and spectroscopic analysis of proton-irradiated 4H-SiC;Infrared Physics & Technology;2021-11
4. Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors;ECS Journal of Solid State Science and Technology;2021-05-01
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