Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2741118
Reference7 articles.
1. Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser
2. Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1−x)0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition
3. Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature
4. Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser
5. Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission;AIP Advances;2017-01
2. Highly efficient -1st-order reflection in Littrow mounted dielectric double-groove grating;AIP Advances;2013-06
3. Incident angle dependency of propagating modes in rectangular grating for polarization-independent −1ST order diffraction or polarization splitting;Microwave and Optical Technology Letters;2010-03-19
4. Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier;Semiconductor Science and Technology;2008-12-05
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