Transverse Magnetoresistance of n‐Type Germanium for High Electric Fields Applied in the 〈111〉 Direction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1708812
Reference2 articles.
1. Hot electron galvanomagnetic effects in many-valley seimconductors
2. Hot electron in n-type germanium
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Field Distribution and Mobility in Semiconductors;Japanese Journal of Applied Physics;1985-05-20
2. High-Field Hall Factor ofn−Geat 200 °K;Physical Review B;1971-08-15
3. Hot-electron hall mobility and magnetoresistance of n-type germanium for electric field along 〈100〉 direction;Physics Letters A;1968-01
4. Hot carrier Hall mobility and magnetoresistance in n-type germanium for intermediate carrier concentration;Proceedings of the Physical Society;1967-06
5. Longitudinal Magnetoresistance and Hall Mobility of n‐Type Germanium at High Electric Fields;Journal of Applied Physics;1967-05
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