Band gap engineering of Si-Ge alloys for mid-temperature thermoelectric applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/3/1.4916918.pdf?itemId=/content/aip/journal/adva/5/3/10.1063/1.4916918&mimeType=pdf&containerItemId=content/aip/journal/adva
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1. Thermal properties of high quality single crystals of bismuth telluride—Part I: Experimental characterization
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3. Enhanced Thermoelectric Figure-of-Merit in p-Type Nanostructured Bismuth Antimony Tellurium Alloys Made from Elemental Chunks
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1. Direct and quasi-direct band gap of novel Si-Ge alloys in P-3m1 phase;Journal of Physics: Condensed Matter;2021-07-22
2. P63/mmc-Ge and their Si–Ge alloys with a mouldable direct band gap;Semiconductor Science and Technology;2020-03-31
3. Elastic anisotropy and thermal conductivity of silicon allotropes;Results in Physics;2019-12
4. Reduced thermal conductivity of nanotwinned random layer structures: a promising nanostructuring towards efficient Si and Si/Ge thermoelectric materials;Journal of Physics D: Applied Physics;2018-04-30
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