The effect of Ar+ion implantation on the electrical characteristics of Cr/P‐Si Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351049
Reference18 articles.
1. Reducing the effective height of a Schottky barrier using low‐energy ion implantation
2. Increasing the effective height of a Schottky barrier using low‐energy ion implantation
3. Ion bombardment of nickel contacts on silicon
4. Modification of metal Schottky contacts on silicon by ion implantation
5. Effect of Ar+ion bombardment on the electrical characteristics of Al/n‐Si contacts
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1. Schottky Barrier Modulation in Surface Nanoroughened Silicon Nanomembranes for High-Performance Optoelectronics;ACS Applied Materials & Interfaces;2018-11-08
2. The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs);Materials Science in Semiconductor Processing;2015-11
3. Role of the early stages of Ni-Si interaction on the structural properties of the reaction products;Journal of Applied Physics;2013-09-28
4. Silicided Au/Ni bilayer on p-type [001] silicon for low contact resistance metallization schemes;Microelectronic Engineering;2013-07
5. Structural and electrical characterization of silicided Ni/Au contacts formed at low temperature (<300 °C) on p-type [001] silicon;Journal of Applied Physics;2011-12-15
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