Nonvolatile memory with molecule-engineered tunneling barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2911741
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1. Metal-oxide-semiconductor diodes containing C60 fullerenes for non-volatile memory applications;Journal of Applied Physics;2013-01-28
2. Redox Molecules for a Resonant Tunneling Barrier in Nonvolatile Memory;IEEE Transactions on Electron Devices;2012-04
3. Nonvolatile-Memory Characteristics of SiC Nanocrystals with Variable Oxide Thickness and Crested Tunnel Barriers;Journal of Nanoscience and Nanotechnology;2011-07-01
4. Ir Nanocrystals on Asymmetric Si3N4/SiO2 Tunneling Layer with Large Memory Window for Nonvolatile Memory Application;Nanoscience and Nanotechnology Letters;2011-04-01
5. Probing the Orbital Levels of Engineered Fullerenic Molecules from a Nonvolatile Memory Cell;MRS Proceedings;2011
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