Crystallization behavior of amorphous Alx(Ge2Sb2Te5)1−x thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3471799
Reference22 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices
3. Phase-change materials for rewriteable data storage
4. Phase-Change Behavior of Stoichiometric Ge[sub 2]Sb[sub 2]Te[sub 5] in Phase-Change Random Access Memory
5. Low-cost and nanoscale non-volatile memory concept for future silicon chips
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2. One-step crystallization in (Ge2Sb2Te5)90Ga10 thin film;Materials Letters;2023-05
3. Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films;Acta Materialia;2022-08
4. Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application;Materials Research Bulletin;2022-05
5. Phase transitions of Ge12Sb88 thin films on high- and low-thermal-conductivity substrates and their potential applications in storage;Journal of Physics D: Applied Physics;2022-01-20
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