Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Selective area growth of AlGaN nanopyramid arrays on graphene by metal-organic vapor phase epitaxy

Published:2018-12-24 Issue:26 Volume:113 Page:263102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Munshi A. Mazid¹,Kim Dong-Chul¹,Heimdal Carl Philip¹,Heilmann Martin²,Christiansen Silke H.²³,Vullum Per Erik⁴,van Helvoort Antonius T. J.⁵,Weman Helge¹⁶^ORCID

Affiliation:

1. CrayoNano AS, Sluppenvegen 6, 7037 Trondheim, Norway

2. Max Planck Institute for the Science of Light, Staudtstrasse 2, 91058 Erlangen, Germany

3. Helmholtz Centre Berlin for Materials and Energy, Hahn-Meitner Platz 1, 14109 Berlin, Germany

4. SINTEF Industry, 7465 Trondheim, Norway

5. Department of Physics, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway

6. Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway

Funder

EUROSTARS

German Research Foundation

NANO2021

NORTEM

Norwegian Micro- and Nano-Fabrication Facility, NorFab

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5052054

Reference37 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

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4. Prospects of III-nitride optoelectronics grown on Si

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