Space‐Charge Domains at Dislocation Sites
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1657423
Reference13 articles.
1. The scanning electron microscope
2. Observations of Individual Dislocations and Oxygen Precipitates in Silicon with a Scanning Electron Beam Method
3. Analysis of N-Type GaAs with Electron-Beam-Excited Radiative Recombination
4. Oriented growth and definition of medium angle semiconductor bicrystals
5. Dislocation Planes in Semiconductors
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