Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103153
Reference9 articles.
1. Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures
2. Energy dependence and depth distribution of dry etching-induced damage in III/V semiconductor heterostructures
3. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
4. Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties
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