Photo-Hall-effect study of excitation and recombination in Fe-doped GaN-Reference-Cited by-同舟云学术

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Photo-Hall-effect study of excitation and recombination in Fe-doped GaN

Published:2017-02-14 Issue:6 Volume:121 Page:065702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Look David C.¹²³,Leach Jacob H.⁴,Metzger Robert⁴

Affiliation:

1. Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, USA

2. Air Force Research Laboratory Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USA

3. Wyle Laboratories, Inc., 2601 Mission Point Blvd., Dayton, Ohio 45431, USA

4. Kyma Technologies Inc., 8829 Midway West Road, Raleigh, North Carolina 27617, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4975622

Reference26 articles.

1. Demonstration of an AlGaN-based solar-blind high-voltage photoconductive switch

2. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications

3. High voltage bulk GaN-based photoconductive switches for pulsed power applications

4. Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-insulating β-Ga2O3 thin films by doping with a valence controllable Fe element;Applied Physics A;2018-08-14

2. Dynamics of low temperature excitons in Fe-doped GaN;Journal of Physics D: Applied Physics;2018-01-22

3. Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers;MRS Advances;2018-01

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