Electron mobility limits of two‐dimensional electron gas in N‐AlGaAs/GaAs at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334855
Reference18 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Electronic properties of two-dimensional systems
3. A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)
4. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Suppression of acoustic phonon scattering in two‐dimensional electron gas on (InAs)1(GaAs)1/InP heterointerfaces;Applied Physics Letters;1989-06-12
2. Coherence length in quantum interference devices having periodic potential;Applied Physics Letters;1988-09-05
3. Modeling of MODFETs;IEEE Transactions on Microwave Theory and Techniques;1988-07
4. Warm electron coefficient of two dimensional electron gas in a GaAs-AlGaAs heterojunctions at low temperatures;Solid-State Electronics;1988-03
5. WARM ELECTRON COEFFICIENT OF TWO DIMENSIONAL ELECTRON GAS IN A GaAs-AlGaAs HETEROJUNCTIONS AT LOW TEMPERATURES;Hot Carriers in Semiconductors;1988
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