Characteristics of magnetic field sensor utilizing Co-based Schottky contacts

Abstract

We have explored an approach to constructing reliable magnetic field sensors based on cobalt-based Schottky contacts, which has the potential to find practical applications when an applied magnetic field modifies the current–voltage (I–V) characteristics of heterostructures. For this aim, heterostructures based on a ferromagnetic film Co were deposited on a Si(100) substrate by means of an ultrathin Pt film. The electrical properties of Co/Pt/Si heterojunctions were investigated using temperature-dependent I–V characteristics. The magnetic transport properties of Co/Pt/Si heterojunctions have been investigated, and the results show that the experimental ratio of current, I(B)/I(0), measured in magnetic field B and zero field, is linearly related to magnetic field B and almost independent of the applied voltage. Detailed measurements of the sensitivity and linearity of a heterojunction-based self-referencing magnetic field sensor were performed. The results show that the linearity and sensitivity of the sensor increase with an increase in the applied voltage frequency, and the sensitivity of the sensor reaches up to 72.09 μA/T at a voltage frequency of 2000 Hz. The sensor is easy to integrate with existing semiconductor processes, has a simple structure, and can be used for geological applications such as energy exploration.