Impurity Gradients in Te‐Doped GaP Liquid Phase Epitaxy Layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659464
Reference7 articles.
1. GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%
2. Distribution of Impurities in Zn,O-Doped GaP Liquid Phase Epitaxy Layers
3. Solubility and Electrical Behavior of Zinc, Sulfur, Selenium, and Tellurium in Gallium Phosphide
4. Solubility of III–V Compound Semiconductors in Column III Liquids
5. Niobium Solid Electrolyte Capacitors
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1. The study of photoluminescence spectra depth profiles of epitaxial layers GaP: Zn, O;Czechoslovak Journal of Physics;1981-04
2. Atomic diffusion in semiconductor epitaxial structures;Physica Status Solidi (a);1977-07-16
3. Very High Efficiency GaP Green Light Emitting Diodes;Journal of The Electrochemical Society;1975-03-01
4. Liquid phase epitaxy processes for GaP led's;Journal of Crystal Growth;1974-12
5. Calculation of distribution coefficients of donors in III-V semiconductors;Journal of Physics and Chemistry of Solids;1974-01
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