Electron capture and emission by the Ti acceptor level in GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360097
Reference15 articles.
1. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
2. Non-Radiative Transitions in Semiconductors
3. Capture, emission and recombination at a deep level via an excited state
4. Optical transitions via the deep O donor in GaP. I. Phonon interaction in low-temperature spectra
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Studies of the g factors and zero-field splitting for the trigonal Ti2+GaSp defect center in GaP crystal;Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy;2003-03
2. gallium phosphide (GaP), defect levels associated with transition metal impurities: capture and emission data;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
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