Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy-Reference-Cited by-同舟云学术

Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy

Published:2022-10-17 Issue:16 Volume:121 Page:163501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shin Wonjun¹^ORCID,Bae Jong-Ho²,Kim Jaehyeon¹,Koo Ryun-Han¹,Kim Jae-Joon¹,Kwon Daewoong³^ORCID,Lee Jong-Ho¹^ORCID

Affiliation:

1. Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea

2. School of Electrical Engineering, Kookmin University, Seoul 02707, South Korea

3. Department of Electrical Engineering, Inha University, Incheon, South Korea

Abstract

We investigate the variability of a ferroelectric FET (FEFET) in program operation using low-frequency noise (LFN) spectroscopy. Contrary to the previous report, LFN characteristics of FEFETs differ significantly depending on the program [low threshold voltage ( Vth)] or erase state [high Vth)] [Shin et al., IEEE Electron Device Lett. 43, 13 (2022)]. Furthermore, the 1/ f noise variation of the FEFETs is much larger in the program state than that in the erase state. It is revealed that the change in the number of electrons trapped at the FE/dielectric interface and oxygen vacancy in each program operation is the main reason for the variability of the FEFET in program operation. The variation stemming from the change in the number of trapped charges is significantly worsened when the channel area is scaled down.

Funder

Institute of information & communications technology planning & evaluation

Brain Korea 21 Plus Project

Basic Science Research Program through the National Research Foundation of Korea

National research Facilities and Equipment center

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0111309

Reference22 articles.

1. S. Dünkel , M. Trentzsch , R. Richter , P. Moll , C. Fuchs , O. Gehring , and S. Beyer , in IEEE International Electron Devices Meeting (IEDM) ( IEEE, 2017), p. 19-7.

2. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

3. A review of emerging non-volatile memory (NVM) technologies and applications

4. S. Dutta , H. Ye , W. Chakraborty , Y. C. Luo , M. San Jose , B. Grisafe , and S. Datta , in IEEE International Electron Devices Meeting (IEDM) ( IEEE, 2020), p. 36-4.

5. K. Ni , W. Chakraborty , J. Smith , B. Grisafe , and S. Datta , in Symposium on VLSI Technology ( IEEE, 2019), pp. T40–T41.

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