Dielectric properties of rf‐sputtered Y2O3thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346804
Reference8 articles.
1. Electroforming and conduction in thin anodized Y2O3 films
2. Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuits
3. Yttrium oxide based metal-insulator-semiconductor structures on silicon
4. Heteroepitaxial growth of Y2O3films on silicon
5. Choice of dielectrics for TFEL displays
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1. Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices;Scientific Reports;2024-01-11
2. Low Leakage in High‐k Perovskite Gate Oxide SrHfO3;Advanced Electronic Materials;2023-04-17
3. The tunable dielectric properties of sputtered yttrium oxide films;Applied Physics A;2021-01-13
4. Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching;Advanced Electronic Materials;2020-09-09
5. Dependence of photoluminescence of Bi-doped Y2O3 phosphor thin films on oxygen content in the sputtering atmosphere;Thin Solid Films;2018-03
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