Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors-Reference-Cited by-同舟云学术

Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors

Published:2008-03-24 Issue:12 Volume:92 Page:123506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ryan J. T.,Lenahan P. M.,Robertson J.,Bersuker G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2902295

Reference20 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. High dielectric constant gate oxides for metal oxide Si transistors

3. Review on high-k dielectrics reliability issues

4. Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks

5. Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

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