Influence of silicon on the properties of reactively sputtered hydrogenated amorphous germanium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107838
Reference14 articles.
1. Influence of plasma deposition on structural and electronic properties of a-Ge:H
2. Structural, optical and photoelectronic properties of improved PECVD a-Ge:H
3. Correlation between the structural and the electronic transport properties of sputtered hydrogenated amorphous germanium films
4. Structural, electrical, and optical properties ofa-Si1−xGex:H and an inferred electronic band structure
5. Structural, optical, and spin properties of hydrogenated amorphous silicon‐germanium alloys
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1. Characterization and Properties of Amorphous Nonstoichiometric Ge1-x−Cx:H Compounds Obtained by Radiolysis−CVD of Germane/Ethyne Systems;Chemistry of Materials;2004-02-18
2. Amorphous Germanium Carbides by Radiolysis−CVD of Germane/Ethyne Systems: Preparation and Reaction Mechanisms;Chemistry of Materials;2002-05-11
3. Characterisation and Properties of Amorphous Nonstoichiometric Ge1−xCx:H Compounds Obtained from X-Ray Radiolysis of Germane/Ethylene Mixtures;European Journal of Inorganic Chemistry;2001-05
4. Structural and optoelectronic properties of Ge‐rich hydrogenated amorphous silicon‐germanium alloys;Journal of Applied Physics;1994-08-15
5. Vibrational, optical and electronic properties of the hydrogenated amorphous germanium-carbon alloy system;Philosophical Magazine B;1994-01
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