Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869761
Reference22 articles.
1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
2. Present status of amorphous In–Ga–Zn–O thin-film transistors
3. Thin-Film Transistors
4. Effects of Different Annealing Gases on Pentacene OTFT With HfLaO Gate Dielectric
5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
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