Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2165129
Reference9 articles.
1. Quenching of Magnetoresistance by Hot Electrons in Magnetic Tunnel Junctions
2. Band Structure and Density of States Effects in Co-Based Magnetic Tunnel Junctions
3. Interface Magnetism and Spin Wave Scattering in Ferromagnet-Insulator-Ferromagnet Tunnel Junctions
4. Excitation of Er3+ ions in silicon dioxide films thermally grown on silicon
5. Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction
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1. Macro model for stochastic behavior of resistance distribution of magnetic tunnel junction;Japanese Journal of Applied Physics;2015-03-26
2. Advantages of High-T c Cuprates over Semiconductors for Making Room Temperature Electronic Devices;Journal of Superconductivity and Novel Magnetism;2011-09-07
3. Magneto-Transport Characteristics of Magnetic Tunnel Junction With a Synthetic Antiferromagnetic Amorphous CoFeSiB Free Layer;IEEE Transactions on Magnetics;2008-11
4. Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers;Journal of Magnetism and Magnetic Materials;2007-03
5. High Density MRAM Device Technology Based on Magnetic Tunnel Junctions;Journal of the Korean Magnetics Society;2006-06-01
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