Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors-Reference-Cited by-同舟云学术

Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Published:2015-02-16 Issue:7 Volume:106 Page:071107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zuo Daniel¹,Liu Runyu¹,Wasserman Daniel¹,Mabon James²,He Zhao-Yu³,Liu Shi³,Zhang Yong-Hang³,Kadlec Emil A.⁴,Olson Benjamin V.⁴,Shaner Eric A.⁴

Affiliation:

1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

2. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA

3. Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

4. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

U.S. Department of Energy (DOE)

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4913312

Reference17 articles.

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3. Type-II InAs/GaInSb superlattices for infrared detection: an overview

4. Strained and Unstrained Layer Superlattices for Infrared Detection

5. Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices

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