Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon-Reference-Cited by-同舟云学术

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Published:2015-02-16 Issue:7 Volume:106 Page:071108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jahangir Shafat¹²,Frost Thomas¹²,Hazari Arnab¹²,Yan Lifan¹³,Stark Ethan¹²,LaMountain Trevor¹^ORCID,Millunchick Joanna M.¹³,Ooi Boon S.⁴,Bhattacharya Pallab¹²

Affiliation:

1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA

2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA

3. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2122, USA

4. Division of Computer, Electrical and Mathematical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Funder

National Science Foundation (NSF)

King Abdullah University of Science and Technology (KAUST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913317

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1. EFFECT OF 630-NM PULSED LASER IRRADIATION ON THE PROLIFERATION OF HeLa CELLS IN PHOTOFRIN-MEDIATED PHOTODYNAMIC THERAPY

2. Future of group-III nitride semiconductor green laser diodes [Invited]