Fabrication of fully epitaxial magnetic tunnel junctions using L21-ordered Co2FeAl0.5Si0.5 electrodes and their tunneling magnetoresistance characteristics-Reference-Cited by-同舟云学术

Fabrication of fully epitaxial magnetic tunnel junctions using L21-ordered Co2FeAl0.5Si0.5 electrodes and their tunneling magnetoresistance characteristics

Published:2008-09-22 Issue:12 Volume:93 Page:122506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Wenhong,Sukegawa Hiroaki,Shan Rong,Inomata Koichiro

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2988649

Reference22 articles.

1. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

2. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

3. Tunneling between ferromagnetic films

4. New Class of Materials: Half-Metallic Ferromagnets

5. Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments

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