Memristive operation mode of a site-controlled quantum dot floating gate transistor-Reference-Cited by-同舟云学术

Memristive operation mode of a site-controlled quantum dot floating gate transistor

Published:2015-05-18 Issue:20 Volume:106 Page:203501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Maier P.¹,Hartmann F.¹,Mauder T.¹,Emmerling M.¹,Schneider C.¹,Kamp M.¹,Höfling S.¹²,Worschech L.¹

Affiliation:

1. Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

2. SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, United Kingdom

Funder

European Union

State of Bavaria

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921061

Reference26 articles.

1. Memristor-The missing circuit element

2. Memristive devices and systems

3. The missing memristor found

4. Reproducible switching effect in thin oxide films for memory applications

5. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

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