Excellent carrier mobility of 0.24 cm2/Vs in regioregular poly(3-hexylthiophene) based field-effect transistor by employing octadecyltrimethoxysilane treated gate insulator-Reference-Cited by-同舟云学术

Excellent carrier mobility of 0.24 cm2/Vs in regioregular poly(3-hexylthiophene) based field-effect transistor by employing octadecyltrimethoxysilane treated gate insulator

Published:2012-01-09 Issue:2 Volume:100 Page:023304
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiang Yi-Da,Jen Tzu-Hao,Chen Show-An

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3676444

Reference18 articles.

1. All jet-printed polymer thin-film transistor active-matrix backplanes

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4. Two-dimensional charge transport in self-organized, high-mobility conjugated polymers

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