Growth kinetics and optical properties of self-organized GaN quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367878
Reference15 articles.
1. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
2. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
3. InP islands on InGaP/GaAs(001): island separation distributions
4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
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