Peculiarities of high electric field conduction in p-type diamond-Reference-Cited by-同舟云学术

Peculiarities of high electric field conduction in p-type diamond

Published:2016-04-11 Issue:15 Volume:108 Page:152106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mortet V.¹²^ORCID,Trémouilles D.³,Bulíř J.¹,Hubík P.¹,Heller L.¹,Bedel-Pereira E.³,Soltani A.⁴

Affiliation:

1. Institute of Physics CAS, v.v.i., Na Slovance 2, 182 21, Prague 8, Czech Republic

2. Faculty of Biomedical Engineering, Czech Technical University in Prague, Sitna 3105, 272 01 Kladno, Czech Republic

3. LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France

4. Institut d'Electronique, Microélectronique et Nanotechnologie, UMR-CNRS 8520, Université Lille, Cite Scientifique, Avenue Poincaré, CS 60069, 59652 Villeneuve d'Ascq Cedex, France

Funder

Academy of Science of the Czech Republic, Czech Science Foundation (GACR)

French-Czech project PHC BARANDE 2016

J.E. Purkyne fellowship of Academy of Sciences of Czech Republic

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4946853

Reference19 articles.

1. Semiconductors at cryogenic temperatures

2. Passive Diamond Electronic Devices

3. Impact ionization of impurities in germanium

4. Anisotropy of critical field in low-temperature electrical breakdown in n-type silicon

5. Peculiarities of impact ionization of Impurity Al in SiC polytypes

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