Effects of rapid thermal annealing and SiO2encapsulation on GaInAs/AlInAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103204
Reference13 articles.
1. Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densities
2. Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices
3. Room‐temperature exciton electroabsorption in partially intermixed GaAs/AlGaAs quantum well waveguides
4. Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures
5. Modification of exciton emission energies in InGaAs/AlInAs quantum wells by rapid thermal annealing
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4. Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers;Journal of Applied Physics;2002-02-15
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