Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies-Reference-Cited by-同舟云学术

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Induced conductivity in sol-gel ZnO films by passivation or elimination of Zn vacancies

Published:2016-09 Issue:9 Volume:6 Page:095004
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Winarski D. J.¹,Anwand W.²,Wagner A.²,Saadatkia P.¹,Selim F. A.¹^ORCID,Allen M.³^ORCID,Wenner B.⁴^ORCID,Leedy K.⁴,Allen J.³,Tetlak S.⁴,Look D. C.⁴

Affiliation:

1. Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio 43403, USA

2. Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany

3. Air Force Research Laboratory, Munitions Directorate, Eglin AFB, FL 32542, USA

4. Air Force Research Laboratory Sensors Directorate, Wright-Patterson Air Force Base, Ohio, 45431, USA

Funder

Air Force Research Laboratory (AFRL)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962658

Reference35 articles.

1. Transparent Conducting Oxides—An Up-To-Date Overview

2. Zinc Oxide as a Model Transparent Conducting Oxide: A Theoretical and Experimental Study of the Impact of Hydroxylation, Vacancies, Interstitials, and Extrinsic Doping on the Electronic Properties of the Polar ZnO (0002) Surface

3. Recent advances in ZnO materials and devices

4. Textured aluminum‐doped zinc oxide thin films from atmospheric pressure chemical‐vapor deposition

5. Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy

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