Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n+ type doped GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1814794
Reference13 articles.
1. D. E. Aspnes, in Handbook on Semiconductors, edited by T. S. Moss (North-Holland, New York, 1980), Vol. 2, p. 109.
2. Franz–Keldysh oscillations in modulation spectroscopy
3. Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system
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