BaTi4O9 thin films for high-performance metal-insulator-metal capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2048827
Reference15 articles.
1. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
2. A new damascene architecture for high-performance metal–insulator–metal capacitors integration
3. High-density MIM capacitors using Al2O3 and AlTiOx dielectrics
4. Very high density RF MIM capacitors (17 fF/μm/sup 2/) using high-/spl kappa/ Al/sub 2/O3 doped Ta/sub 2/O/sub 5/ dielectrics
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3. Electrical Properties of Amorphous BaTi4 O9 Films Grown on Cu/Ti/SiO2 /Si Substrates Using RF Magnetron Sputtering;Journal of the American Ceramic Society;2013-02-12
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