Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC-Reference-Cited by-同舟云学术

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Effects of rapid thermal annealing on Al2O3/SiN reaction barrier layer/thermal-nitrided SiO2 stacking gate dielectrics on n-type 4H-SiC

Published:2010-03-22 Issue:12 Volume:96 Page:122108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Moon Jeong Hyun,Yim Jeong Hyuk,Seo Han Seok,Lee Do Hyun,Kim Chang Hyun,Kim Hyeong Joon,Cheong Kuan Yew,Bahng Wook,Kim Nam-Kyun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3367891

Reference24 articles.

1. Advances in SiC power MOSFET technology

2. Insulator investigation on SiC for improved reliability

3. Electronic Properties of SiON/HfO₂ Insulating Stacks on 4H-SiC (0001)

4. Electrical Properties of the La₂O₃/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)₃ and H₂O

5. Structural properties of epitaxial γ-Al2O3 (111) thin films on 4H-SiC (0001)

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1. Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition;Materials Science in Semiconductor Processing;2024-05

2. High Ion/Ioff ratio 4H-SiC MISFETs with stable operation at 500 °C using SiO2/SiNx/Al2O3 gate stacks;Applied Physics Letters;2023-02-20

3. Impacts of Al2O3/SiO2 Interface Dipole Layer Formation on the Electrical Characteristics of 4H-SiC MOSFET;IEEE Electron Device Letters;2022-01

4. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021

5. Investigation of spatial charge distribution and electrical dipole in atomic layer deposited Al2O3on 4H-SiC;Journal of Physics D: Applied Physics;2016-05-03

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