Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets-Reference-Cited by-同舟云学术

Modulating above-room-temperature magnetism in Ga-implanted Fe5GeTe2 van der Waals magnets

Published:2023-09-01 Issue:9 Volume:11 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Yuan Yanan¹,Liu Daxiang¹,Yu Jingjing²,Zhang Guanhua³,Chen Xiang⁴,Liu Ruiqi¹,Wang Siyu¹,Pei Fangfang¹,Wei Long¹,Li Zhi¹,Guo Junming²,Wang Shouguo⁵,Liao Zhaoliang¹^ORCID,Yan Wensheng¹^ORCID,Qiu Ziqiang⁴^ORCID,Yang Mengmeng²^ORCID,Li Qian¹^ORCID

Affiliation:

1. National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China 1 , Hefei, Anhui 230026, China

2. Institute of Physical Science and Information Technology, Anhui University 2 , Hefei, Anhui 230601, China

3. State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences 3 , Dalian, China

4. Department of Physics, University of California 4 , Berkeley, California 94720, USA

5. School of Materials Science and Engineering Department, Anhui University 5 , Hefei 230601, China

Abstract

The creation of van der Waals (vdW) ferromagnets with tunable Curie temperature (TC) and magnetic anisotropy is essential in developing vdW magnet-based devices. Here, we report an effective and reliable method for modulating the magnetic properties of vdW Fe5GeTe2 by site-specific Ga+ implantation. In this study, we report an easy axis in the ab-plane for bulk Fe5GeTe2 (TC = 310 K) and an axis out of the plane for thin Fe5GeTe2 flakes (TC = 290 K). Combining element-resolved photoemission electron microscopy and spatially resolved magneto-optic Kerr microscopy, we find that the implantation of a tiny amount of 10−3 Ga+·Å−3 in Fe5GeTe2 greatly enhances the TC from 290 to 360 K and switches the magnetic easy axis from the out-of-plane c axis to the ab-plane. The room-temperature x-ray magnetic circular dichroism signal is enhanced from 0% to 9% at an implantation level of 10−2 Ga+·Å−3. These results provide new opportunities for tailoring the magnetic properties of vdW materials beyond room temperature.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

the USTC Research Funds of the Double First-Class Initiative

Users with Excellence Program of Hefei Science Center CAS

Open Funds of Hefei National Research Center for Physical Sciences at the Microscale

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0168468/18105437/091101_1_5.0168468.pdf

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