Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions-Reference-Cited by-同舟云学术

Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions

Published:2017-08-07 Issue:6 Volume:111 Page:061605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Harrington S. D.¹^ORCID,Sharan A.²,Rice A. D.¹^ORCID,Logan J. A.¹^ORCID,McFadden A. P.³,Pendharkar M.³^ORCID,Pennachio D. J.¹,Wilson N. S.¹,Gui Z.⁴,Janotti A.²⁴,Palmstrøm C. J.¹³

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA

3. Department of Electrical & Computer Engineering, University of California, Santa Barbara, California 93106, USA

4. Department of Materials Science & Engineering, University of Delaware, Newark, Delaware 19716, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Office of Naval Research (ONR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4985200

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