High‐rate deposition of a‐Si:H films using a flow plasma–chemical method with electron beam activation-Reference-Cited by-同舟云学术

High‐rate deposition of a‐Si:H films using a flow plasma–chemical method with electron beam activation

Published:1996-05-01 Issue:9 Volume:79 Page:7274-7277
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Sharafutdinov R. G.¹,Skrynnikov A. V.¹,Parakhnevich A. V.¹,Ayupov B. M.²,Badalian A. M.²,Polyakov O. V.²,Baklanov M. R.³,Mogilnikov K. P.³,Biryukov S. A.³

Affiliation:

1. Institute of Thermophysics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

2. Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

3. Institute of Physics of Semiconductors, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference12 articles.

1. A. Madan and M. P. Shaw, The Physics and Applications of Amorphous Semiconductors (Academic, New York, 1988).

2. J. P. M. Schmitt, Thin Solid Films 174, 193 (1989).THSFAP0040-6090

3. W. Luft, Appl. Phys. Commun. 8, 239 (1988).APCODQ0277-9374

4. Y. S. Tsuo and W. Luft, Appl. Phys. Commun. 10, 71 (1990).APCODQ0277-9374

5. Y. Hishikawa, S. Tsuda, K. Wakisaka, and Y. Kuwano, J. Appl. Phys. 73, 4227 (1993).JAPIAU0021-8979

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of diluent gas on silicon film deposition from a free jet of monosilane-diluent mixture activated by electron-beam plasma;Journal of Engineering Thermophysics;2012-02-25

2. Role of secondary electrons and metastable atoms in the electron-beam activation of argon-silane mixtures;Plasma Physics Reports;2008-01

3. Condensation of Argon, Monosilane and Their Mixtures in a Pulse Free Jet;Plasma Chemistry and Plasma Processing;2005-08

4. Effect of Small Methane and Monosilane Additives on Clustering in Pulsed Supersonic Argon Jets;Technical Physics;2005

5. Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD;Surface and Coatings Technology;2003-09